© Semiconductor Components Industries, LLC, 2000

September, 2000 − Rev. XXX

1

Publication Order Number:

MTW24N40E/D

MTW24N40E

Preferred Device

Power MOSFET

24 Amps, 400 Volts

N−Channel TO−247

This high voltage MOSFET uses an advanced termination scheme

to provide enhanced voltage−blocking capability without degrading

performance over time. In addition, this advanced Power MOSFET is

designed to withstand high energy in the avalanche and commutation

modes. The new energy efficient design also offers a drain−to−source

diode with a fast recovery time. Designed for high voltage, high speed

switching applications in power supplies, converters and PWM motor

controls, these devices are particularly well suited for bridge circuits

where diode speed and commutating safe operating areas are critical

and offer additional safety margin against unexpected voltage

transients.

Fast Recovery Diode

Rating

Symbol

Value

Unit

Drain−Source Voltage

400

Vdc

400

Vdc

Gate−Source Voltage

− Continuous

± 20

± 40

Vdc

Vpk

Drain Current − Continuous

°C

24

17.7

72

Adc

Apk

Total Power Dissipation

Derate above 25

°C

250

2.0

Watts

W/

°C

Operating and Storage Temperature Range

− 55 to

150

°C

Single Pulse Drain−to−Source Avalanche

600

mJ

Thermal Resistance − Junction to Case

0.50

40

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8

″ from case for 10 seconds

260

°C

Device

Package

Shipping

ORDERING INFORMATION

MTW24N40E

TO−247

30 Units/Rail

Preferred devices are recommended choices for future use

and best overall value.

LL

= Location Code

Y

= Year

WW

= Work Week

MTW24N40E

LLYWW

http://onsemi.com

MARKING DIAGRAM

& PIN ASSIGNMENT

D

G

TO−247AE

CASE 340K

Style 1

N−Channel

S

24 AMPERES

400 VOLTS

1

2

3

4

1

Gate

3

Source

4

Drain

2

Drain