MTW24N40E datasheet(6/8 Pages) ONSEMI

Part #	MTW24N40E

Description	N?묬hannel Power MOSFET

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MTW24N40E

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6

SAFE OPERATING AREA

RθJC(t) = r(t) RθJC

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) RθJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

0.1

1.0

1000

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

10

100

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

0.1

0

25

50

75

100

125

100

VGS =20 V

SINGLE PULSE

TC = 25°C

700

300

200

100

ID = 24 A

500

1.0

10

150

t, TIME (s)

Figure 13. Thermal Response

Figure 14. Diode Reverse Recovery Waveform

di/dt

trr

ta

tp

IS

0.25 IS

TIME

IS

tb

0.2

0.02

0.1

D = 0.5

0.05

1.0E−05

1.0E−04

1.0E−03

100 µs

1 ms

10 ms

DC

400

600

0.01

1.0E−02

1.0E−01

1.0E+00

1.0E+01

0.1

1.0

0.001

0.01

SINGLE PULSE

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MTW24N40E Datasheet(PDF) 6 Page - ON Semiconductor

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