INA3221

SBOS576A – MAY 2012 – REVISED JUNE 2013

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This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

PRODUCT

PACKAGE-LEAD

PACKAGE DESIGNATOR

PACKAGE MARKING

INA3221AIRGV

QFN-16

RGV

INA3221

(1)

For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the

device product folder at www.ti.com.

ABSOLUTE MAXIMUM RATINGS

(1)

Over operating free-air temperature range, unless otherwise noted.

VALUE

UNIT

Voltage

6

V

–26 to +26

V

IN+, IN–

Analog inputs

Common-mode

–0.3 to +26

V

VBUS, VPU

26

V

Critical, warning, power valid

6

V

Digital outputs

Timing control

26V

V

Data line, SDA

(GND – 0.3) to +6

V

Serial bus

Clock line, SCL

V

Input, into any pin

5

mA

Current

Open-drain, digital output

10

mA

Storage

–65 to +150

°C

Temperature

Junction

+150

°C

Human body model (HBM)

2500

V

Electrostatic discharge (ESD) ratings

Charged-device model (CDM)

1000

V

Machine model (MM)

200

V

(1)

Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may

degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond

those specified is not implied.

(2)

VIN+ and VIN– can have a differential voltage of –26 V to +26 V; however, the voltage at these pins must not exceed the range of

–0.3 V to +26 V.

2

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