LM4125

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SNVS238A – MAY 2004 – REVISED APRIL 2013

LM4125 Precision Micropower Low Dropout Voltage Reference

Check for Samples: LM4125

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FEATURES

DESCRIPTION

The LM4125 is a precision low power low dropout

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Small SOT23-5 Package

bandgap voltage reference with up to 5 mA output

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Low Dropout Voltage: 120 mV Typ @ 1 mA

current source and sink capability.

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High Output Voltage Accuracy: 0.2%

This series reference operates with input voltages as

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Source and Sink Current Output: ±5 mA

low as 2V and up to 6V consuming 160 µA (Typ.)

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Supply Current: 160

μA Typ.

supply current. In power down mode, device current

drops to less than 2

μA.

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Low Temperature Coefficient: 50 ppm/°C

The LM4125 comes in two grades (A and Standard)

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Fixed Output Voltages: 2.048, 2.5,and 4.096

and three voltage options for greater flexibility. The

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Industrial Temperature Range:

−40°C to +85°C

best grade devices (A) have an initial accuracy of

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(For Extended Temperature Range,

−40°C to

0.2%, while the standard have an initial accuracy of

125°C, Contact TI)

0.5%, both with a tempco of 50ppm/°C ensured from

−40°C to +125°C.

APPLICATIONS

The very low dropout voltage, low supply current and

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Portable, Battery Powered Equipment

power-down capability of the LM4125 makes this

product an ideal choice for battery powered and

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Instrumentation and Process Control

portable applications.

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Automotive & Industrial

The device performance is ensured over the industrial

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Test Equipment

temperature range (

−40°C to +85°C), while certain

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Data Acquisition Systems

specs are ensured over the extended temperature

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Precision Regulators

range (

−40°C to +125°C). Please contact TI for full

specifications over the extended temperature range.

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Battery Chargers

The LM4125 is available in a standard 5-pin SOT-23

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Base Stations

package.

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Communications

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Medical Equipment

Connection Diagram

Figure 1. 5-Pin SOT-23 Surface Mount Package

See Package Number DBV

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

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Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

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PRODUCTION DATA information is current as of publication date.

Copyright © 2004–2013, Texas Instruments Incorporated

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.