2SB1126 / 2SD1626

Rev.0 I Page 1 of 4 I www.onsemi.com

Applications

•

Relay drivers, hammer drivers, lamp drivers, motor drivers.

Features

•

High DC current gain (4000 or greater).

•

Large current capacity.

•

Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s.

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

(--)80

V

Collector-to-Emitter Voltage

VCEO

(--)50

V

Emitter-to-Base Voltage

VEBO

(--)10

V

Collector Current

IC

(--)1.5

A

Collector Current (Pulse)

ICP

(--)3

A

Collector Dissipation

PC

500

mW

✕0.8mm)

1.5

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector Cutoff Current

ICBO

VCB=(--)40V, IE=0A

(--)100

nA

Emitter Cutoff Current

IEBO

VEB=(--)8V, IC=0A

(--)100

nA

Marking 2SB1126 : BI

Continued on next page.

2SD1626 : DI

2SB1126 / 2SD1626

PNP / NPN Epitaxial Planar Silicon Transistors

For Various Drivers

Ordering number : EN1721B

© 2011, SCILLC. All rights reserved.

Jan-2011, Rev. 0

www.onsemi.com

Publication Order Number:

2SB1126_2SD1626/D