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8Mb: 512K x 18, 256K x 32/36 Pipelined ZBT SRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

MT55L512L18P_2.p65 – Rev. 6/01

©2001, Micron Technology, Inc.

8Mb: 512K x 18, 256K x 32/36

PIPELINED ZBT SRAM

SNOOZE MODE

SNOOZE MODE is a low-current, “power-down”

mode in which the device is deselected and current is

dictated by the length of time the ZZ pin is in a HIGH

state. After the device enters SNOOZE MODE, all inputs

except ZZ become disabled and all outputs go to

High-Z.

The ZZ pin is an asynchronous, active HIGH input

that causes the device to enter SNOOZE MODE. When

tion pending when the device enters SNOOZE MODE is

not guaranteed to complete successfully. Therefore,

SNOOZE MODE must not be initiated until valid pend-

ing operations are completed. Similarly, when exiting

READ cycle should be given.

SNOOZE MODE ELECTRICAL CHARACTERISTICS

DESCRIPTION

CONDITIONS

SYMBOL

MIN

MAX

UNITS

NOTES

Current during SNOOZE MODE

ZZ

10

m A

ZZ active to input ignored

0

ns

1

ZZ inactive to input sampled

0

ns

1

ZZ active to snooze current

ns

1

ZZ inactive to exit snooze current

0

ns

1

SNOOZE MODE WAVEFORM

t

ZZ

I

SUPPLY

CLK

ZZ

t

RZZ

ALL INPUTS

(except ZZ)

DON’T CARE

I

ISB2Z

t

ZZI

t

RZZI

Outputs (Q)

High-Z

DESELECT or READ Only

NOTE: 1. This parameter is sampled.