19

8Mb: 512K x 18, 256K x 32/36 Pipelined ZBT SRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

MT55L512L18P_2.p65 – Rev. 6/01

©2001, Micron Technology, Inc.

8Mb: 512K x 18, 256K x 32/36

PIPELINED ZBT SRAM

ABSOLUTE MAXIMUM RATINGS*

Storage Temperature (plastic) .......... -55°C to +150°C

Storage Temperature (FBGA) .......... -55°C to +125°C

Junction Temperature** .................................. +150°C

Short Circuit Output Current .......................... 100mA

*Stresses greater than those listed under “Absolute

Maximum Ratings” may cause permanent damage to

the device. This is a stress rating only, and functional

operation of the device at these or any other conditions

above those indicated in the operational sections of

this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may

affect reliability.

**Junction temperature depends upon package

type, cycle time, loading, ambient temperature, and

airflow. See Micron Technical Note TN-05-14 for more

information.

3.3V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS

(0°C

≤ T

DESCRIPTION

CONDITIONS

SYMBOL

MIN

MAX

UNITS

NOTES

Input High (Logic 1) Voltage

2.0

V

1, 2

Input High (Logic 1) Voltage

DQ pins

2.0

V

1, 2

Input Low (Logic 0) Voltage

-0.3

0.8

V

1, 2

Input Leakage Current

0V

-1.0

1.0

µA

3

Output Leakage Current

Output(s) disabled,

-1.0

1.0

µA

0V

Output High Voltage

2.4

–

V

1, 4

Output Low Voltage

–

0.4

V

1, 4

Supply Voltage

3.135

3.465

V

1

Isolated Output Buffer Supply

3.135

V

1, 5

2. Overshoot:

Undershoot:

Power-up:

3. MODE pin has an internal pull-up, and input leakage = ±10µA.

curves are available upon request.