Electronic Components Datasheet Search |
|
IPD068N10N3G Datasheet(PDF) 7 Page - Infineon Technologies AG |
|
|
IPD068N10N3G Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 9 page IPD068N10N3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=90 A pulsed parameter: T j(start) parameter: V DD 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 20 V 50 V 80 V 0 2 4 6 8 10 0 20 40 60 Q gate [nC] 90 95 100 105 110 -60 -20 20 60 100 140 180 T j [°C] V GS Q gate V gs(th) Q g(th) Q gs Q gd Q sw Q g 25 °C 100 °C 150 °C 1 10 100 0.1 1 10 100 1000 t AV [µs] Rev. 2.2 page 7 2014-05-19 |
Similar Part No. - IPD068N10N3G |
|
Similar Description - IPD068N10N3G |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |