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IPD068N10N3G Datasheet(PDF) 4 Page - Infineon Technologies AG |
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IPD068N10N3G Datasheet(HTML) 4 Page - Infineon Technologies AG |
4 / 9 page IPD068N10N3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 10 ms DC 10-1 100 101 102 103 100 101 102 103 V DS [V] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10-5 10-4 10-3 10-2 10-1 100 10-2 10-1 100 101 t p [s] 0 25 50 75 100 125 150 175 0 50 100 150 200 T C [°C] 0 20 40 60 80 100 0 50 100 150 200 T C [°C] Rev. 2.2 page 4 2014-05-19 |
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