![]() |
Electronic Components Datasheet Search |
|
IPD068N10N3G Datasheet(PDF) 3 Page - Infineon Technologies AG |
|
|
IPD068N10N3G Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 9 page ![]() IPD068N10N3 G Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 3690 4910 pF Output capacitance C oss - 646 - Reverse transfer capacitance C rss - 25 - Turn-on delay time t d(on) - 19 - ns Rise time t r - 37 - Turn-off delay time t d(off) - 37 - Fall time t f - 9 - Gate Charge Characteristics 6) Gate to source charge Q gs - 18 - nC Gate to drain charge Q gd - 10 - Switching charge Q sw - 17 - Gate charge total Q g - 51 68 Gate plateau voltage V plateau - 4.9 - V Output charge Q oss V DD=50 V, V GS=0 V - 68 91 nC Reverse Diode Diode continous forward current I S - - 90 A Diode pulse current I S,pulse - - 360 Diode forward voltage V SD V GS=0 V, I F=90 A, T j=25 °C - 1 1.2 V Reverse recovery time t rr - 73 - ns Reverse recovery charge Q rr - 139 - nC 6) See figure 16 for gate charge parameter definition V R=15 V, I F=80 A , di F/dt =100 A/µs T C=25 °C Values V GS=0 V, V DS=50 V, f =1 MHz V DD=50 V, V GS=10 V, I D=80 A, R G,ext=3.6 W V DD=50 V, I D=90 A, V GS=0 to 10 V Rev. 2.2 page 3 2014-05-19 |
Similar Part No. - IPD068N10N3G |
|
Similar Description - IPD068N10N3G |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |