BSG0810NDI datasheet(2/14 Pages) INFINEON

Part #	BSG0810NDI

Description	Pb-free lead plating; RoHS compliant

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Manufacturer	INFINEON [Infineon Technologies AG]

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BSG0810NDI

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Q1 R thJC

-

4.3

K/W

Q2

-

1.8

Q1 R thJA

Q2

Q1

Q2

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

Q1

Q2

Q1

Q2

Gate threshold voltage

Q1

Q2

Zero gate voltage drain current

Q1 I DSS

-

1

µA

Q2

-

500

Q1

-

100

Q2

-

0.9

-

mA

Gate-source leakage current

Q1 I GSS

Q2

Q1 R DS(on)

-

3.2

4.0

m

W

Q2

-

1.0

1.2

Q1

-

2.4

3.0

Q2

-

0.75

0.9

Gate resistance

Q1 R G

-

0.7

1.2

W

Q2

-

0.8

1.3

Transconductance

Q1 g fs

47

94

-

S

Q2

55

110

-

V GS(th)

V

V DS=V GS, I D=250 µA

20

50

-

1.6

25

6)

V

-

mV/K

dV

(BR)DSS

/dT j

I D=10 mA, referenced

to 25 °C

-

Thermal resistance, junction -

case

6 cm

2 cooling area4)

V (BR)DSS V GS=0 V, I D=1 mA

Values

15

V DS=25 V, V GS=0 V,

T j=25 °C

2) Remark: only one of both transistors active

Drain-source on-state

resistance

Thermal resistance, junction -

ambient

2)

Application specific

board

3)

100

-

2

1.2

-

Breakdown voltage temperature

coefficient

V GS=4.5 V, I D=20 A

V GS=10 V, I D=20 A

|V DS|>2|I D|R DS(on)max,

I D=20 A

V DS=20 V, V GS=0 V,

T j=125 °C

nA

-

V GS=16 V, V DS=0 V

-

Rev.2.0.1

page 2

2015-08-21

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