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BSG0810NDI Datasheet(PDF) 11 Page - Infineon Technologies AG |
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BSG0810NDI Datasheet(HTML) 11 Page - Infineon Technologies AG |
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11 / 14 page  BSG0810NDI 25 Typ. gate charge (Q1) 26 Typ. gate charge (Q2) V GS=f(Q gate); I D=20 A pulsed V GS=f(Q gate); I D=20 A pulsed parameter: V DD parameter: V DD 27 Drain-source breakdown voltage (Q1) 28 Typ. drain-source leakage current (Q2) V BR(DSS)=f(T j); I D=1 mA I DSS=f(V DS ); V GS=0 V parameter: T j 20 21 22 23 24 25 26 27 28 -60 -20 20 60 100 140 180 T j [°C] 5 V 12 V 20 V 0 2 4 6 8 10 0 2 4 6 8 10 12 14 Q gate [nC] 5 V 12 V 20 V 0 2 4 6 8 10 0 10 20 30 40 Q gate [nC] 25 °C 75 °C 100 °C 125 °C 10-6 10-5 10-4 10-3 10-2 0 5 10 15 20 V DS [V] Rev.2.0.1 page 11 2015-08-21 |
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