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BSG0810NDI Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BSG0810NDI Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 14 page  BSG0810NDI Power Block Features • Dual asymmetric N-channel OptiMOS™5 MOSFET • Logic level (4.5V rated) • Pb-free lead plating; RoHS compliant • Optimized for high performance Buck converter • Qualified according to JEDEC 1) for target applications • Halogen-free according to IEC61249-2-21 • Monolithic integrated Schottky like diode Maximum ratings, at Tj=25°C, unless otherwise specified 2) Parameter Symbol Conditions Unit Q1 Q2 Continuous drain current I D T C=70 °C, V GS=10 V 50 50 A T C=70 °C, V GS=4.5 V 50 50 T A=25 °C, V GS=4.5 V 3) 31 50 T A=25 °C, V GS=4.5 V 4) 19 39 Pulsed drain current I D,pulse T C=70 °C 160 160 Avalanche energy, single pulse E AS Q1: I D=10 A, Q2: I D=20 A, R GS=25 W 30 90 mJ Gate source voltage V GS T j=25 °C V Power dissipation P tot T A=25 °C 3) 6.25 6.25 W T A=25 °C 4) 2.5 2.5 Operating and storage temperature T j, T stg °C IEC climatic category; DIN IEC 68-1 Value -55 ... 150 55/150/56 ±16 1) J-STD20 and JESD22 Type Package Marking BSG0810NDI PG-TISON8-4 0810NDI D1 (Vin) S1 (VPhase) D1 (Vin) G1 (GHS) S1/D2 (VPhase) G2 (GLS) S1/D2 (VPhase) S1/D2 (VPhase) S2 (GND) Q1 Top view (1) (2) (3) (4) (5) (6) (7) (8) (10) (9) Q2 Pin 1 S1 (VPhase) (2) G1 (GHS) (1) (7) S1/D2 (VPhase) Bottom View S2 (GND) Pin 10 (6) S1/D2 (VPhase) (5) S1/D2 (VPhase) D1 (Vin) (4) D1 (Vin) Pin 9 D1 (Vin) (3) (8) G2 (GLS) Q1 Q2 V DS 25 25 V R DS(on),max V GS=10 V 3 0.9 m W V GS=4.5 V 4 1.2 I D 50 50 A Product Summary Rev.2.0.1 page 1 2015-08-21 |
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