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BSG0810NDI Datasheet(PDF) 9 Page - Infineon Technologies AG |
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BSG0810NDI Datasheet(HTML) 9 Page - Infineon Technologies AG |
9 / 14 page ![]() BSG0810NDI 17 Typ. gate threshold voltage (Q1) 18 Typ. gate threshold voltage (Q2) V GS(th)=f(T j); V GS=V DS; I D=250 µA V GS(th)=f(T j); V GS=V DS; I D=10 mA 19 Typ. capacitances (Q1) 20 Typ. capacitances (Q2) C =f(V DS); V GS=0 V; f =1 MHz C =f(V DS); V GS=0 V; f =1 MHz Ciss Coss Crss 100 101 102 103 104 0 5 10 15 20 25 V DS [V] Ciss Coss Crss 101 102 103 104 0 5 10 15 20 25 V DS [V] 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -60 -20 20 60 100 140 180 T j [°C] 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -60 -20 20 60 100 140 180 T j [°C] Rev.2.0.1 page 9 2015-08-21 |
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