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BSG0810NDI Datasheet(PDF) 4 Page - Infineon Technologies AG |
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BSG0810NDI Datasheet(HTML) 4 Page - Infineon Technologies AG |
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4 / 14 page  BSG0810NDI Parameter Symbol Conditions Unit min. typ. max. Reverse Diode Diode continuous forward current Q1 I S - - 29 A Q2 50 Diode pulse current Q1 I S,pulse - - 160 Q2 - - 160 Diode forward voltage Q1 V SD V GS=0 V, I F=20 A, T j=25 °C - 0.85 1 V Q2 V GS=0 V, I F=11 A, T j=25 °C - 0.49 0.7 Reverse recovery charge Q1 Q rr nC Q2 5) For more information see application note n° TBD 6) The device can withstand a pulse of not more than 30V for a duration of up to 2ns at a frequency of 600KHz with maximum buck converter input voltage VIN=16 V Values T C=25 °C V R=12 V, I F=I S, di F/dt =100 A/µs 10 - - Rev.2.0.1 page 4 2015-08-21 |
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