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11N60K-MT Datasheet(PDF) 1 Page - Unisonic Technologies |
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11N60K-MT Datasheet(HTML) 1 Page - Unisonic Technologies |
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1 / 6 page ![]() UNISONIC TECHNOLOGIES CO., LTD 11N60K-MT Preliminary Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R502-A99.c 11A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 11N60K-MT is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 11N60K-MT is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc. FEATURES * RDS(ON) < 1.00 Ω @ VGS = 10 V, ID = 5.5 A * Fast Switching * With 100% Avalanche Tested SYMBOL 1.Gate 3.Source 2.Drain ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing 11N60KL-TF2-T 11N60KG-TF2-T TO-220F2 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source MARKING |
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