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LM3243 Datasheet(PDF) 4 Page - Texas Instruments

Part # LM3243
Description  LM3243 High-Current Step-Down Converter for 2G, 3G, and 4G RF Power Amplifiers
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

LM3243 Datasheet(HTML) 4 Page - Texas Instruments

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LM3243
SNVS782C – OCTOBER 2010 – REVISED AUGUST 2015
www.ti.com
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1) (2) (3)
MIN
MAX
UNIT
VDD, PVIN to SGND
−0.2
6
V
PGND to SGND
−0.2
0.2
V
EN, FB, VCON, BP, MODE
(SGND
− 0.2)
(VDD + 0.2)
V
SW, ACB
(PGND
− 0.2)
(PVIN + 0.2)
V
PVIN to VDD
−0.2
0.2
V
Continuous power dissipation(4)
Internally limited
Junction temperature, TJ-MAX
150
°C
Maximum lead temperature
(soldering, 10 sec)
150
°C
Storage temperature, Tstg
−65°
150
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Recommended Operating Conditions are
conditions under which operation of the device is specified. Operating Ratings do not imply verified performance limits. For performance
limits and associated test conditions, see Electrical Characteristics .
(3)
All voltages are with respect to the potential at the GND pins. The LM3243 is designed for mobile phone applications where turnon after
power-up is controlled by the system controller and where requirements for a small package size overrule increased die size for internal
undervoltage lock-out (UVLO) circuitry. Thus, it should be kept in shutdown by holding the EN pin LOW until the input voltage exceeds
2.7 V.
(4)
Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at TJ = 150°C (typical) and
disengages at TJ = 130°C (typical).
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±2000
V
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
(1) (2)
MIN
NOM
MAX
UNIT
Input voltage
2.7
5.5
V
Recommended load current
2.5
A
Junction temperature, TJ
−30
125
°C
Ambient temperature, TA
(3)
−30
90
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
All voltages are with respect to the potential at the GND pins. The LM3243 is designed for mobile phone applications where turnon after
power up is controlled by the system controller and where requirements for a small package size overrule increased die size for internal
undervoltage lock-out (UVLO) circuitry. Thus, it should be kept in shutdown by holding the EN pin LOW until the input voltage exceeds
2.7 V.
(3)
In applications where high-power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may
have to be de-rated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP =
125°C), the maximum power dissipation of the device in the application (PD-MAX), and the junction-to ambient thermal resistance of the
part/package in the application (RθJA), as given by the following equation: TA-MAX = TJ-MAX-OP – (RθJA × PD-MAX). At higher power levels
duty cycle usage is assumed to drop (that is, max power 12.5% usage is assumed) for 2G mode.
4
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