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IPB020N08N5 Datasheet(PDF) 9 Page - Infineon Technologies AG |
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IPB020N08N5 Datasheet(HTML) 9 Page - Infineon Technologies AG |
9 / 12 page 9 OptiMOSª5Power-Transistor,80V IPB020N08N5 Rev.2.0,2014-12-17 Final Data Sheet Diagram9:Drain-sourceon-stateresistance Tj[°C] -60 -20 20 60 100 140 180 0 1 2 3 4 5 max typ RDS(on)=f(Tj);ID=100A;VGS=10V Diagram10:Typ.gatethresholdvoltage Tj[°C] -60 -20 20 60 100 140 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 2080 µA 208 µA VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances VDS[V] 0 20 40 60 80 101 102 103 104 105 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram12:Forwardcharacteristicsofreversediode VSD[V] 0.0 0.5 1.0 1.5 2.0 2.5 100 101 102 103 25 °C 175 °C 25 °C, max 175 °C, max IF=f(VSD);parameter:Tj |
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