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IPB020N08N5 Datasheet(PDF) 6 Page - Infineon Technologies AG |
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IPB020N08N5 Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 12 page ![]() 6 OptiMOSª5Power-Transistor,80V IPB020N08N5 Rev.2.0,2014-12-17 Final Data Sheet Table7Reversediode Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode continous forward current IS - - 120 A TC=25°C Diode pulse current IS,pulse - - 480 A TC=25°C Diode forward voltage VSD - 0.9 1.2 V VGS=0V,IF=100A,Tj=25°C Reverse recovery time 1) trr - 85 1.2 ns VR=40V,IF=100A,diF/dt=100A/µs Reverse recovery charge 1) Qrr - 202 404 nC VR=40V,IF=100A,diF/dt=100A/µs 1) Defined by design. Not subject to production test. |
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