IPB020N08N5 datasheet(4/12 Pages) INFINEON

Part #	IPB020N08N5

Description	N-channel, normal level

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Manufacturer	INFINEON [Infineon Technologies AG]

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4

OptiMOSª5Power-Transistor,80V

IPB020N08N5

Rev.2.0,2014-12-17

Final Data Sheet

2Maximumratings

atTj=25°C,unlessotherwisespecified

Table2Maximumratings

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Continuous drain current

ID

-

120

A

TC=25°C

TC=100°C

Pulsed drain current

1)

ID,pulse

-

480

A

TC=25°C

Avalanche energy, single pulse

2)

EAS

-

674

mJ

ID=100A,RGS=25

Ω

Gate source voltage

VGS

-20

-

20

V

-

Power dissipation

Ptot

-

300

W

TC=25°C

Operating and storage temperature

Tj,Tstg

-55

-

175

°C

IEC climatic category;

DIN IEC 68-1: 55/175/56

3Thermalcharacteristics

Table3Thermalcharacteristics

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Thermal resistance, junction - case

RthJC

-

0.4

0.5

K/W

-

Thermal resistance, junction - ambient,

minimal footprint

RthJA

-

62

K/W

-

Thermal resistance, junction - ambient,

6 cm

2 cooling area3)

RthJA

-

40

K/W

-

Soldering temperature, wave and

reflow soldering are allowed

Tsold

-

260

°C

reflow MSL1

1) See figure 3 for more detailed information

2) See figure 13 for more detailed information

3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.

PCB is vertical in still air.

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