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IPB017N10N5 Datasheet(PDF) 2 Page - Infineon Technologies AG |
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IPB017N10N5 Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 12 page 2 OptiMOSª5Power-Transistor,100V IPB017N10N5 Rev.2.2,2015-10-15 Final Data Sheet 1 7 tab D²-PAK7pin Drain Pin 4, tab Gate Pin 1 Source Pin 2,3,5,6,7 1Description Features •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 1.7 m Ω ID 180 A Qoss 213 nC QG(0V..10V) 168 nC Type/OrderingCode Package Marking RelatedLinks IPB017N10N5 PG-TO263-7 017N10N5 - 1) J-STD20 and JESD22 |
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