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IPB017N10N5 Datasheet(PDF) 10 Page - Infineon Technologies AG |
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IPB017N10N5 Datasheet(HTML) 10 Page - Infineon Technologies AG |
10 / 12 page 10 OptiMOSª5Power-Transistor,100V IPB017N10N5 Rev.2.2,2015-10-15 Final Data Sheet Diagram13:Avalanchecharacteristics tAV[µs] 100 101 102 103 100 101 102 103 25 °C 100 °C 150 °C IAS=f(tAV);RGS=25 Ω;parameter:Tj(start) Diagram14:Typ.gatecharge Qgate[nC] 0 50 100 150 200 0 2 4 6 8 10 80 V 50 V 20 V VGS=f(Qgate);ID=100Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Tj[°C] -60 -20 20 60 100 140 180 95 100 105 110 VBR(DSS)=f(Tj);ID=1mA Gate charge waveforms |
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