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IPB017N10N5 Datasheet(PDF) 6 Page - Infineon Technologies AG |
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IPB017N10N5 Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 12 page ![]() 6 OptiMOSª5Power-Transistor,100V IPB017N10N5 Rev.2.2,2015-10-15 Final Data Sheet Table7Reversediode Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode continous forward current IS - - 180 A TC=25°C Diode pulse current IS,pulse - - 720 A TC=25°C Diode forward voltage VSD - 0.9 1.2 V VGS=0V,IF=100A,Tj=25°C Reverse recovery time 1) trr - 88 176 ns VR=50V,IF=100A,diF/dt=100A/µs Reverse recovery charge 1) Qrr - 235 470 nC VR=50V,IF=100A,diF/dt=100A/µs 1) Defined by design. Not subject to production test. |
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