IPB017N10N5 datasheet(5/12 Pages) INFINEON

Part #	IPB017N10N5

Description	N-channel, normal level

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Manufacturer	INFINEON [Infineon Technologies AG]

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5

OptiMOSª5Power-Transistor,100V

IPB017N10N5

Rev.2.2,2015-10-15

Final Data Sheet

4Electricalcharacteristics

Table4Staticcharacteristics

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Drain-source breakdown voltage

V(BR)DSS

100

-

V

VGS=0V,ID=1mA

Gate threshold voltage

VGS(th)

2.2

3

3.8

V

VDS=VGS,ID=279µA

Zero gate voltage drain current

IDSS

-

0.1

10

5

100

µA

VDS=100V,VGS=0V,Tj=25°C

VDS=100V,VGS=0V,Tj=125°C

Gate-source leakage current

IGSS

-

1

100

nA

VGS=20V,VDS=0V

Drain-source on-state resistance

RDS(on)

-

1.5

1.7

2.2

m

Ω

VGS=10V,ID=100A

VGS=6V,ID=50A

Gate resistance

1)

RG

-

1.3

2.0

Ω

-

Transconductance

gfs

132

264

-

S

|VDS|>2|ID|RDS(on)max,ID=100A

Table5Dynamiccharacteristics1)

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Input capacitance

Ciss

-

12000 15600 pF

VGS=0V,VDS=50V,f=1MHz

Output capacitance

Coss

-

1810

2353

pF

VGS=0V,VDS=50V,f=1MHz

Reverse transfer capacitance

Crss

-

80

140

pF

VGS=0V,VDS=50V,f=1MHz

Turn-on delay time

td(on)

-

33

-

ns

VDD=50V,VGS=10V,ID=100A,

RG,ext=1.6

Ω

Rise time

tr

-

23

-

ns

VDD=50V,VGS=10V,ID=100A,

RG,ext=1.6

Ω

Turn-off delay time

td(off)

-

80

-

ns

VDD=50V,VGS=10V,ID=100A,

RG,ext=1.6

Ω

Fall time

tf

-

27

-

ns

VDD=50V,VGS=10V,ID=100A,

RG,ext=1.6

Ω

Table6Gatechargecharacteristics2)

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Gate to source charge

Qgs

-

53

-

nC

VDD=50V,ID=100A,VGS=0to10V

Gate to drain charge

1)

Qgd

-

34

51

nC

VDD=50V,ID=100A,VGS=0to10V

Switching charge

Qsw

-

51

-

nC

VDD=50V,ID=100A,VGS=0to10V

Gate charge total

1)

Qg

-

168

210

nC

VDD=50V,ID=100A,VGS=0to10V

Gate plateau voltage

Vplateau

-

4.4

-

V

VDD=50V,ID=100A,VGS=0to10V

Output charge

1)

Qoss

-

213

283

nC

VDD=50V,VGS=0V

1) Defined by design. Not subject to production test.

2) See

″Gate charge waveforms″ for parameter definition

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