IPB017N10N5 datasheet(4/12 Pages) INFINEON

Part #	IPB017N10N5

Description	N-channel, normal level

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Manufacturer	INFINEON [Infineon Technologies AG]

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4

OptiMOSª5Power-Transistor,100V

IPB017N10N5

Rev.2.2,2015-10-15

Final Data Sheet

2Maximumratings

atTA=25°C,unlessotherwisespecified

Table2Maximumratings

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Continuous drain current

ID

-

180

A

TC=25°C

TC=100°C

Pulsed drain current

1)

ID,pulse

-

720

A

TC=25°C

Avalanche energy, single pulse

EAS

-

979

mJ

ID=100A,RGS=25

Ω

Gate source voltage

VGS

-20

-

20

V

-

Power dissipation

Ptot

-

375

W

TC=25°C

Operating and storage temperature

Tj,Tstg

-55

-

175

°C

IEC climatic category;

DIN IEC 68-1: 55/175/56

3Thermalcharacteristics

Table3Thermalcharacteristics

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Thermal resistance, junction - case

RthJC

-

0.3

0.4

K/W

-

Thermal resistance, junction - ambient,

minimal footprint

RthJA

-

62

K/W

-

Thermal resistance, junction - ambient,

6 cm

2 cooling area2)

RthJA

-

40

K/W

-

Soldering temperature and reflow

soldering is allowed

Tsold

-

260

°C

reflow MSL1

1) see Diagram 3 for more detailed information.

2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.

PCB is vertical in still air.

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