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IKCM15L60GA Datasheet(PDF) 10 Page - Infineon Technologies AG |
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IKCM15L60GA Datasheet(HTML) 10 Page - Infineon Technologies AG |
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10 / 16 page  CIPOS™ IKCM15L60GA Datasheet 10 Ver. 1.2, 2014-06-01 Dynamic Parameters (VDD = 15V and TJ = 25°C, if not stated otherwise) Description Condition Symbol Value Unit min typ max Turn-on propagation delay time VLIN,HIN = 5V; Iout = 10A, VDC = 300V ton - 680 - ns Turn-on rise time tr - 30 - ns Turn-on switching time tc(on) - 220 - ns Reverse recovery time trr - 60 - ns Turn-off propagation delay time VLIN,HIN = 0V; Iout = 10A, VDC = 300V toff - 950 - ns Turn-off fall time tf - 55 - ns Turn-off switching time tc(off) - 120 - ns Short circuit propagation delay time From VIT,TH+ to 10% ISC tSCP - 1250 - ns Input filter time ITRIP VITRIP = 1V tITRIPmin - 530 - ns Input filter time at LIN, HIN for turn on and off VLIN,HIN = 0V & 5V tFILIN - 290 - ns Fault clear time after ITRIP-fault VITRIP = 1V tFLTCLR 40 65 200 µs Deadtime between low side and high side DTPWM 1.5 - - µs Deadtime of gate drive circuit DTIC - 380 - ns IGBT turn-on energy (includes reverse recovery of diode) VDC = 300V, IC = 10A, TJ = 25°C 150°C Eon - - 400 490 - - µJ IGBT turn-off energy VDC = 300V, IC = 10A, TJ = 25°C 150°C Eoff - - 190 290 - - µJ Diode recovery energy VDC = 300V, IC = 10A, TJ = 25°C 150°C Erec - - 55 70 - - µJ Bootstrap Parameters (TJ = 25°C, if not stated otherwise) Description Condition Symbol Value Unit min typ max Repetitive peak reverse voltage VRRM 600 - - V Bootstrap resistance of U-phase1 VS2 or VS3 = 300V, TJ = 25°C VS2 and VS3 = 0V, TJ = 25°C VS2 or VS3 = 300V, TJ = 125°C VS2 and VS3 = 0V, TJ = 125°C RBS1 - 35 40 50 65 - Ω Reverse recovery time IF = 0.6A, di/dt = 80A/µs trr_BS - 50 - ns Forward voltage drop IF = 20mA, VS2 and VS3 = 0V V F_BS - 2.6 - V 1 RBS2 and RBS3 have same values to RBS1. |
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