NXP Semiconductors

PMV130ENEA

40 V, N-channel Trench MOSFET

PMV130ENEA

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Product data sheet

12 June 2014

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8. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

drain-source voltage

-

40

V

gate-source voltage

-20

20

V

[1]

-

2.1

A

drain current

[1]

-

1.3

A

peak drain current

-

8

A

non-repetitive drain-source

avalanche energy

avalanche (unclamped)

-

5.8

mJ

[2]

-

460

mW

[1]

-

833

mW

total power dissipation

-

5000

mW

junction temperature

-55

150

°C

ambient temperature

-55

150

°C

storage temperature

-65

150

°C

Source-drain diode

source current

[1]

-

0.8

A

ESD maximum rating

electrostatic discharge voltage HBM

[3]

-

1000

V

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

[2] Device mounted on an FR4 Printed Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[3] Measured between all pins.