PMV130ENEA

40 V, N-channel Trench MOSFET

12 June 2014

Product data sheet

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1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23

(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

2. Features and benefits

3. Applications

4. Quick reference data

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

-

-

40

V

gate-source voltage

-20

-

20

V

drain current

[1]

-

-

2.1

A

Static characteristics

drain-source on-state

resistance

-

95

120

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for