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PMV130ENEA Datasheet(PDF) 9 Page - NXP Semiconductors |
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PMV130ENEA Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 16 page ![]() NXP Semiconductors PMV130ENEA 40 V, N-channel Trench MOSFET PMV130ENEA All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 12 June 2014 9 / 16 QG (nC) 0 2.5 2.0 1.0 1.5 0.5 aaa-011952 4 6 2 8 10 VGS (V) 0 ID = 1.5 A; VDS = 20 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values 003aaa508 VGS VGS(th) QGS1 QGS2 QGD VDS QG(tot) ID QGS VGS(pl) Fig. 15. MOSFET transistor: Gate charge waveform definitions aaa-011953 VSD (V) 0 1.2 0.8 0.4 2 1 3 4 IS (A) 0 Tj = 150 °C Tj = 25 °C VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values 11. Test information t1 t2 P t 006aaa812 duty cycle δ = t1 t2 Fig. 17. Duty cycle definition |
Similar Part No. - PMV130ENEA_15 |
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Similar Description - PMV130ENEA_15 |
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