NXP Semiconductors

PMV130ENEA

40 V, N-channel Trench MOSFET

PMV130ENEA

All information provided in this document is subject to legal disclaimers.

© NXP Semiconductors N.V. 2014. All rights reserved

Product data sheet

12 June 2014

8 / 16

0

5

4

2

3

1

aaa-010269

2

4

6

(A)

0

Fig. 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

-60

180

120

0

60

aaa-010260

1.0

0.5

1.5

2.0

a

0

Fig. 11. Normalized drain-source on-state resistance

as a function of junction temperature; typical

values

-60

180

120

0

60

aaa-010259

1

2

3

(V)

0

min

typ

max

Fig. 12. Gate-source threshold voltage as a function of

junction temperature

10

1

aaa-010258

10

C

(pF)

1

Fig. 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values