PMV130ENEA_15 datasheet(6/16 Pages) PHILIPS

Part #	PMV130ENEA

Description	40 V, N-channel Trench MOSFET

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Manufacturer	PHILIPS [NXP Semiconductors]

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NXP Semiconductors

PMV130ENEA

40 V, N-channel Trench MOSFET

PMV130ENEA

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Product data sheet

12 June 2014

6 / 16

10. Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source

breakdown voltage

ID = 250 µA; VGS = 0 V; Tj = 25 °C

40

-

V

VGSth

gate-source threshold

voltage

ID = 250 µA; VDS = VGS; Tj = 25 °C

1

1.6

2.5

V

VDS = 40 V; VGS = 0 V; Tj = 25 °C

-

1

µA

IDSS

drain leakage current

VDS = 40 V; VGS = 0 V; Tj = 150 °C

-

20

µA

VGS = 20 V; VDS = 0 V; Tj = 25 °C

-

10

µA

IGSS

gate leakage current

VGS = -20 V; VDS = 0 V; Tj = 25 °C

-

-10

µA

VGS = 10 V; ID = 1.5 A; Tj = 25 °C

-

95

120

mΩ

VGS = 10 V; ID = 1.5 A; Tj = 150 °C

-

160

200

mΩ

RDSon

drain-source on-state

resistance

VGS = 4.5 V; ID = 1 A; Tj = 25 °C

-

120

160

mΩ

gfs

forward

transconductance

VDS = 10 V; ID = 2 A; Tj = 25 °C

-

4.5

-

S

RG

gate resistance

f = 1 MHz; Tj = 25 °C

-

21

-

Ω

Dynamic characteristics

QG(tot)

total gate charge

-

2.4

3.6

nC

QGS

gate-source charge

-

0.3

-

nC

QGD

gate-drain charge

VDS = 20 V; ID = 1.5 A; VGS = 10 V;

Tj = 25 °C

-

0.4

-

nC

Ciss

input capacitance

-

113

170

pF

Coss

output capacitance

-

27

-

pF

Crss

reverse transfer

capacitance

VDS = 20 V; f = 1 MHz; VGS = 0 V;

Tj = 25 °C

-

14

-

pF

td(on)

turn-on delay time

-

6

9

ns

tr

rise time

-

8

-

ns

td(off)

turn-off delay time

-

11

17

ns

tf

fall time

VDS = 20 V; ID = 1.5 A; VGS = 10 V;

RG(ext) = 13 Ω; Tj = 25 °C

-

3

-

ns

Source-drain diode

VSD

source-drain voltage

IS = 0.8 A; VGS = 0 V; Tj = 25 °C

-

0.8

1.2

V

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