NXP Semiconductors

PMV130ENEA

40 V, N-channel Trench MOSFET

PMV130ENEA

All information provided in this document is subject to legal disclaimers.

© NXP Semiconductors N.V. 2014. All rights reserved

Product data sheet

12 June 2014

4 / 16

- 75

175

125

25

75

- 25

017aaa123

40

80

120

(%)

0

Fig. 1. MOSFET transistor: Normalized total

power dissipation as a function of junction

temperature

- 75

175

125

25

75

- 25

017aaa124

40

80

120

(%)

0

Fig. 2. MOSFET transistor: Normalized continuous

drain current as a function of junction

temperature

aaa-011949

100

10

1

1

10

(A)

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

9. Thermal characteristics

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

[1]

-

235

270

K/W

thermal resistance

from junction to

ambient

in free air

[2]

-

125

150

K/W