NXP Semiconductors

PMZB550UNE

30 V, N-channel Trench MOSFET

PMZB550UNE

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Product data sheet

25 March 2015

8 / 15

0

4

3

1

2

aaa-017181

0.4

0.6

0.2

0.8

1.0

(A)

0

Fig. 11. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

-60

180

120

0

60

aaa-017182

1.0

0.5

1.5

2.0

a

0

Fig. 12. Normalized drain-source on-state resistance

as a function of junction temperature; typical

values

-60

180

120

0

60

aaa-017183

0.5

1.0

1.5

(V)

0

(1)

(2)

(3)

(1) maximum values

(2) typical values

(3) minimum values

Fig. 13. Gate-source threshold voltage as a function of

junction temperature

aaa-017184

10

1

10

C

(pF)

1

(1)

(2)

(3)

Fig. 14. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values