NXP Semiconductors

PMZB550UNE

30 V, N-channel Trench MOSFET

PMZB550UNE

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Product data sheet

25 March 2015

7 / 15

0

4

3

1

2

aaa-017177

1

2

3

(A)

0

2.5 V

2.0 V

1.8 V

1.5 V

1.2 V

3.0 V

Fig. 7. Output characteristics: drain current as a

function of drain-source voltage; typical values

aaa-017178

0

1.5

1

0.5

(A)

(1)

(2)

(3)

(1) minimum values

(2) typical values

(3) maximum values

Fig. 8. Sub-threshold drain current as a function of

gate-source voltage

aaa-017179

0

3

2

1

1.0

0.5

1.5

2.0

(Ω)

0

2.5 V

2.0 V

1.8 V

1.5 V

1.2 V

3.0 V

Fig. 9. Drain-source on-state resistance as a function

of drain current; typical values

0

5

4

2

3

1

aaa-017180

1.0

0.5

1.5

2.0

(Ω)

0

Fig. 10. Drain-source on-state resistance as a function

of gate-source voltage; typical values