PMZB550UNE_15 datasheet(6/15 Pages) PHILIPS

Part #	PMZB550UNE

Description	30 V, N-channel Trench MOSFET

Download	15 Pages

Scroll/Zoom	100%

Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

Logo

6 / 15 page

NXP Semiconductors

PMZB550UNE

30 V, N-channel Trench MOSFET

PMZB550UNE

All information provided in this document is subject to legal disclaimers.

Product data sheet

25 March 2015

6 / 15

10. Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source

breakdown voltage

ID = 250 µA; VGS = 0 V; Tj = 25 °C

30

-

V

VGSth

gate-source threshold

voltage

ID = 250 µA; VDS = VGS; Tj = 25 °C

0.45

0.7

0.95

V

IDSS

drain leakage current

VDS = 30 V; VGS = 0 V; Tj = 25 °C

-

1

µA

VGS = 8 V; VDS = 0 V; Tj = 25 °C

-

5

µA

VGS = -8 V; VDS = 0 V; Tj = 25 °C

-

-5

µA

VGS = 4.5 V; VDS = 0 V; Tj = 25 °C

-

1

µA

VGS = -4.5 V; VDS = 0 V; Tj = 25 °C

-

-1

µA

VGS = 2.5 V; VDS = 0 V; Tj = 25 °C

-

100

nA

IGSS

gate leakage current

VGS = -2.5 V; VDS = 0 V; Tj = 25 °C

-

-100

nA

VGS = 4.5 V; ID = 590 mA; Tj = 25 °C

-

550

670

mΩ

VGS = 4.5 V; ID = 590 mA; Tj = 150 °C

-

960

1170

mΩ

VGS = 2.5 V; ID = 590 mA; Tj = 25 °C

-

660

900

mΩ

VGS = 1.8 V; ID = 80 mA; Tj = 25 °C

-

770

1120

mΩ

RDSon

drain-source on-state

resistance

VGS = 1.5 V; ID = 10 mA; Tj = 25 °C

-

890

1500

mΩ

gfs

forward

transconductance

VDS = 10 V; ID = 590 mA; Tj = 25 °C

-

600

-

mS

Dynamic characteristics

QG(tot)

total gate charge

-

0.6

1.1

nC

QGS

gate-source charge

-

0.1

-

nC

QGD

gate-drain charge

VDS = 15 V; ID = 590 mA; VGS = 4.5 V;

Tj = 25 °C

-

0.1

-

nC

Ciss

input capacitance

-

30.3

-

pF

Coss

output capacitance

-

5.8

-

pF

Crss

reverse transfer

capacitance

VDS = 15 V; f = 1 MHz; VGS = 0 V;

Tj = 25 °C

-

4.2

-

pF

td(on)

turn-on delay time

-

4

-

ns

tr

rise time

-

7

-

ns

td(off)

turn-off delay time

-

12

-

ns

tf

fall time

VDS = 15 V; ID = 590 mA; VGS = 4.5 V;

RG(ext) = 6 Ω; Tj = 25 °C

-

3

-

ns

Source-drain diode

VSD

source-drain voltage

IS = 380 mA; VGS = 0 V; Tj = 25 °C

-

0.86

1.2

V

Similar Part No. - PMZB550UNE_15

Manufacturer	Part #	Datasheet	Description
Nexperia B.V. All right...	PMZB550UNE	712Kb / 15P	30 V, N-channel Trench MOSFET

More results

Similar Description - PMZB550UNE_15

Manufacturer	Part #	Datasheet	Description
Nexperia B.V. All right...	PMZ550UNE	713Kb / 15P	30 V, N-channel Trench MOSFET
Nexperia B.V. All right...	PMV20XNE	720Kb / 15P	30 V, N-channel Trench MOSFET
NXP Semiconductors	PMZ390UNE	221Kb / 14P	30 V, N-channel Trench MOSFET 12 March 2015
	PMZ550UNE	224Kb / 15P	30 V, N-channel Trench MOSFET 25 March 2015
	PMPB11EN	273Kb / 15P	30 V N-channel Trench MOSFET 14 January 2014
Nexperia B.V. All right...	PMV25ENEA	377Kb / 16P	30 V, N-channel Trench MOSFET
	BUK6D72-30E	285Kb / 15P	30 V, N-channel Trench MOSFET 29 April 2019
	BUK6D38-30E	284Kb / 15P	30 V, N-channel Trench MOSFET 12 April 2019
	BUK4D60-30	301Kb / 15P	30 V, N-channel Trench MOSFET 7 July 2020
	PMPB15ENE	294Kb / 14P	30 V, N-channel Trench MOSFET 30 V, N-channel Trench MOSFET

More results

PMZB550UNE Datasheet(PDF) 6 Page - NXP Semiconductors

PMZB550UNE Datasheet(HTML) 6 Page - NXP Semiconductors

Similar Part No. - PMZB550UNE_15

Similar Description - PMZB550UNE_15

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Datasheet Download

Link URL