PMZB550UNE_15 datasheet(4/15 Pages) PHILIPS

Part #	PMZB550UNE

Description	30 V, N-channel Trench MOSFET

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Manufacturer	PHILIPS [NXP Semiconductors]

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NXP Semiconductors

PMZB550UNE

30 V, N-channel Trench MOSFET

PMZB550UNE

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Product data sheet

25 March 2015

4 / 15

aaa-017176

10-1

10-2

1

10

ID

(A)

10-3

VDS (V)

10-1

102

10

1

Limit RDSon = VDS/ID

DC; Tsp = 25 °C

DC; Tamb = 25 °C;

drain mounting pad 1 cm2

tp = 10 µs

tp = 100 µs

tp = 1 ms

tp = 100 ms

tp = 10 ms

IDM = single pulse

Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

9. Thermal characteristics

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

[1]

-

350

405

K/W

Rth(j-a)

thermal resistance

from junction to

ambient

in free air

[2]

-

270

310

K/W

Rth(j-sp)

thermal resistance

from junction to solder

point

-

65

75

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.

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