3.6V, 1W RF Power Transistors

for 900MHz Applications

_______________________________________________________________________________________

3

1.0

0

0

6

COLLECTOR CURRENT

0.2

0.8

2

4

5

1

3

0.6

0.4

31

0.4

TWO-TONE OUTPUT POWER AND IM3

vs. COLLECTOR CURRENT

27

30

0.6

0.8

0.5

0.7

29

28

IM3

ARE RMS COMPOSITE

TWO-TONE POWER LEVELS

35

5

TWO-TONE OUTPUT POWER, IM3, IM5

vs. INPUT POWER

-5

25

INPUT POWER (dBm)

15

25

10

20

15

5

IM5

IM3

ARE RMS COMPOSITE

TWO-TONE POWER

LEVELS

35

5

TWO-TONE OUTPUT POWER, IM3, IM5

vs. INPUT POWER (f = 433MHz)

-5

25

INPUT POWER (dBm)

15

25

10

20

15

5

IM5

IM3

ARE RMS COMPOSITE

TWO-TONE

POWER LEVELS

-20

-22

-24

-26

-28

10

ACPR vs. OUTPUT POWER

(IS-54

π/4 DQPSK MODULATION, V

-40

OUTPUT POWER (dBm)

20

35

15

25

30

-30

-32

-34

-36

-38

3.0V

3.6V

4.8V

4.2V

60

10

COLLECTOR EFFICIENCY vs. OUTPUT POWER

(IS-54

π/4 DQPSK MODULATION, V

0

OUTPUT POWER (dBm)

20

35

15

25

30

30

40

50

20

10

3.0V

3.6V

4.8V

4.2V

ARE RMS COMPOSITE

TWO-TONE POWER

LEVELS

__________________________________________Typical Operating Characteristics

NAME

—

1, 8

C

Transistor Collector

2, 3, 6, 7, Slug

E

Transistor Emitter

BIAS

4, 5

B

Transistor Base

Anode of the Biasing Diode that matches the thermal and process char-

acteristics of the power transistor. Requires a high-RF-impedance, low-

DC-impedance (e.g., inductor) connection to the transistor base (Pin 4).

Current through the biasing diode (into Pin 3) is proportional to 1/15 the

collector current in the transistor.

FUNCTION

MAX2601

MAX2602

3

1, 8

2, 6, 7, Slug

PIN

4, 5

______________________________________________________________Pin Description