_______________General Description

The MAX2601/MAX2602 are RF power transistors opti-

mized for use in portable cellular and wireless equipment

that operates from three NiCd/NiMH cells or one Li-Ion

cell. These transistors deliver 1W of RF power from a

3.6V supply with efficiency of 58% when biased for con-

stant-envelope applications (e.g., FM or FSK). For NADC

(IS-54) operation, they deliver 29dBm with -28dBc ACPR

from a 4.8V supply.

The MAX2601 is a high-performance silicon bipolar RF

power transistor. The MAX2602 includes a high-

performance silicon bipolar RF power transistor, and a

biasing diode that matches the thermal and process

characteristics of the power transistor. This diode is

used to create a bias network that accurately controls

the power transistor’s collector current as the tempera-

ture changes.

The MAX2601/MAX2602 can be used as the final stage

in a discrete or module power amplifier. Silicon bipolar

technology eliminates the need for voltage inverters

and sequencing circuitry, as required by GaAsFET

power amplifiers. Furthermore, a drain switch is not

required to turn off the MAX2601/MAX2602. This

increases operating time in two ways: it allows lower

system end-of-life battery voltage, and it eliminates the

wasted power from a drain-switch device.

The MAX2601/MAX2602 are available in thermally

enhanced, 8-pin SO packages, which are screened to

the extended temperature range (-40°C to +85°C). The

MAX2602 is also available in die form.

________________________Applications

Narrow-Band PCS (NPCS)

915MHz ISM Transmitters

Microcellular GSM (Power Class 5)

AMPS Cellular Phones

Digital Cellular Phones

Two-Way Paging

CDPD Modems

Land Mobile Radios

____________________________Features

o Low Voltage: Operates from 1 Li-Ion or

3 NiCd/NiMH Batteries

o DC-to-Microwave Operating Range

o 1W Output Power at 900MHz

o On-Chip Diode for Accurate Biasing (MAX2602)

o Low-Cost Silicon Bipolar Technology

o Does Not Require Negative Bias or Supply Switch

o High Efficiency: 58%

3.6V, 1W RF Power Transistors

for 900MHz Applications

________________________________________________________________

Maxim Integrated Products

1

PSOPII

TOP VIEW

PSOPII

8

7

6

5

1

2

3

4

C

E

E

B

C

E

E

B

MAX2602

8

7

6

5

1

2

3

4

C

E

BIAS

B

C

E

E

B

MAX2601

_________________Pin Configurations

19-1185; Rev 2; 5/97

PART

MAX2601ESA

MAX2602ESA

MAX2602E/D

-40°C to +85°C

-40°C to +85°C

-40°C to +85°C

TEMP. RANGE

PIN-PACKAGE

8 PSOPII

8 PSOPII

Dice*

______________Ordering Information

Typical Application Circuit appears at end of data sheet.

EVALUATION

KIT

AVAILABLE

*

For free samples & the latest literature: http://www.maxim-ic.com, or phone 1-800-998-8800.

For small orders, phone 408-737-7600 ext. 3468.