M13S2561616A-2S datasheet(8/49 Pages) ESMT

Part #	M13S2561616A-2S

Description	Double-data-rate architecture, two data transfers per clock cycle

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Manufacturer	ESMT [Elite Semiconductor Memory Technology Inc.]

Direct Link	http://www.esmt.com.tw/index.asp

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8 / 49 page

ESMT

M13S2561616A (2S)

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc.

Publication Date : Jan. 2015

Revision : 1.0

8/49

AC Operation Conditions & Timing Specifications

AC Operation Conditions

Parameter

Symbol

Min

Max

Unit

Note

Input High (Logic 1) Voltage, DQ, DQS and DM signals

VIH(AC)

VREF + 0.31

V

Input Low (Logic 0) Voltage, DQ, DQS and DM signals

VIL(AC)

VREF - 0.31

V

Input Differential Voltage, CLK and CLK inputs

VID(AC)

0.7

VDDQ+0.6

V

1

Input Crossing Point Voltage, CLK and CLK inputs

VIX(AC)

0.5*VDDQ-0.2

0.5*VDDQ+0.2

V

2

Notes:

1. VID is the magnitude of the difference between the input level on CLK and the input on CLK .

2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of

the same.

AC Overshoot / Undershoot Specification

Value

Parameter

-5 / -6

Unit

Address, Control

1.5

V

Maximum peak amplitude allowed for overshoot

Data, Strobe, Mask

1.2

V

Address, Control

1.5

V

Maximum peak amplitude allowed for undershoot

Data, Strobe, Mask

1.2

V

Address, Control

4.5

V-ns

Maximum overshoot area above VDD

Data, Strobe, Mask

2.4

V-ns

Address, Control

4.5

V-ns

Maximum undershoot area below VSS

Data, Strobe, Mask

2.4

V-ns

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