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M13S2561616A-2S Datasheet(PDF) 5 Page - Elite Semiconductor Memory Technology Inc.

Part # M13S2561616A-2S
Description  Double-data-rate architecture, two data transfers per clock cycle
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Manufacturer  ESMT [Elite Semiconductor Memory Technology Inc.]
Direct Link  http://www.esmt.com.tw/index.asp
Logo ESMT - Elite Semiconductor Memory Technology Inc.

M13S2561616A-2S Datasheet(HTML) 5 Page - Elite Semiconductor Memory Technology Inc.

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ESMT
M13S2561616A (2S)
Operation Temperature Condition -40°C~85°C
Elite Semiconductor Memory Technology Inc.
Publication Date : Jan. 2015
Revision : 1.0
5/49
DC Operation Conditions - continued
Parameter
Symbol
Min
Max
Unit
Note
Output High Current (Full strength driver – Normal)
(VOUT =VDDQ-0.373V, min VREF, min VTT)
IOH
-15
mA
5, 7
Output Low Current (Full strength driver – Normal)
(VOUT = 0.373V, max VREF, max VTT)
IOL
+15
mA
5, 7
Output High Current (Reduced strength driver –Weak)
(VOUT = VDDQ-0.763V, min VREF, min VTT)
IOH
-9
mA
6
Output Low Current (Reduced strength driver – Weak)
(VOUT = 0.763V, max VREF, max VTT)
IOL
+9
mA
6
Output High Current (Reduced strength driver –
Matched impedance)
(VOUT = VDDQ-1.056V, min VREF, min VTT)
IOH
-4.5
mA
6
Output Low Current (Reduced strength driver –
Matched impedance)
(VOUT = 1.056V, max VREF, max VTT)
IOL
+4.5
mA
6
Notes:
1. VREF is expected to be equal to 0.5* VDDQ of the transmitting device, and to track variations in the DC level of the same.
Peak-to-peak noise on VREF may not exceed 2% of the DC value.
2. VTT is not applied directly to the device. VTT is system supply for signal termination resistors, is expected to be set
equal to VREF, and must track variations in the DC level of VREF.
3. VID is the magnitude of the difference between the input level on CLK and the input level on CLK .
4. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire
temperature and voltage range, for device drain to source voltages from 0.25 V to 1.0 V. For a given output, it represents
the maximum difference between pullup and pulldown drivers due to process variation. The full variation in the ratio of the
maximum to minimum pullup and pulldown current will not exceed 1.7 for device drain to source voltages from 0.1 to 1.0.
5. VOH = 1.95V, VOL =0.35V.
6. VOH = 1.9V, VOL =0.4V.
7. The values of IOH(DC) is based on VDDQ = 2.3V and VTT = 1.19V.
The values of IOL(DC) is based on VDDQ = 2.3V and VTT = 1.11V.


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