M13S2561616A-2S datasheet(43/49 Pages) ESMT

Part #	M13S2561616A-2S

Description	Double-data-rate architecture, two data transfers per clock cycle

Download	49 Pages

Scroll/Zoom	100%

Manufacturer	ESMT [Elite Semiconductor Memory Technology Inc.]

Direct Link	http://www.esmt.com.tw/index.asp

Logo

43 / 49 page

ESMT

M13S2561616A (2S)

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc.

Publication Date : Jan. 2015

Revision : 1.0

43/49

Power up & Initialization Sequence (based on DDR400)

VDDQ

VREF

A0 - A 9

A11 - A n

P o w e r-u p :

VD D a n d

CL K s t a b l e

BA 0 , BA 1

E x te nde d

M ode

Re g i s t e r

Se t

COMMAND

DM

DQS

t MR D

2 0 0 cyc l e s o f C L K * *

Load

Mo d e

R egi s t er

Re s e t D L L

(wi t h A 8 = H)

L oad

Mo de

R egis t er

( w ith A 8=L)

VDD

A1 0

T = 2 00us

VTT

(system*)

tVDT >=0

CLK

CKE

NOP

t CH

t CL

t CK

t IS t IH

PRE

EMRS

MRS

PRE

AR

MRS

ACT

t IH

t IS

CODE

t IH

t IS

LV C O M S L O W L EV EL

CODE

RA

t IH

t IS

CODE

RA

BA0=L,

BA1=L

BA

t IH

t IS

t IH t IS

BA0=L,

BA1=L

H i gh- Z

DQ

Hi g h - Z

t RP

t RF C

t MR D

ALL BANKS

t RF C

BA0=H,

BA1=L

t IH

t IS

:D o n ’ t c a r e

10 12 2 B 1 6 R . B

Notes:

* = VTT is not applied directly to the device, however tVTD must be greater than or equal to zero to avoid device latch-up.

** = tMRD is required before any command can be applied, and 200 cycles of CLK are required before an executable

command can be applied. The two Auto Refresh commands may be moved to follow the first MRS but precede the

second PRECHARGE ALL command.

Similar Part No. - M13S2561616A-2S

Manufacturer	Part #	Datasheet	Description
Elite Semiconductor Mem...	M13S2561616A-2A	1Mb / 49P	Double-data-rate architecture, two data transfers per clock cycle

More results

Similar Description - M13S2561616A-2S

Manufacturer	Part #	Datasheet	Description
Elite Semiconductor Mem...	M13S128324A-2M	1Mb / 48P	Double-data-rate architecture, two data transfers per clock cycle
Elite Semiconductor Mem...	M13S5121632A-2S	705Kb / 48P	Double-data-rate architecture, two data transfers per clock cycle
Winbond	W9412G2IB4	832Kb / 50P	Double Data Rate architecture; two data transfers per clock cycle
Winbond	W9412G6JH-5	1Mb / 53P	Double Data Rate architecture; two data transfers per clock cycle
Elite Semiconductor Mem...	M13S2561616A-2A	1Mb / 49P	Double-data-rate architecture, two data transfers per clock cycle
Winbond	W9751G6KB-25	1Mb / 87P	Double Data Rate architecture: two data transfers per clock cycle
Elite Semiconductor Mem...	M13L32321A-2G	1Mb / 48P	Double-data-rate architecture, two data transfers per clock cycle
Winbond	W631GG6KB-15	3Mb / 158P	Double Data Rate architecture: two data transfers per clock cycle
Elite Semiconductor Mem...	M13L2561616A-2A	1Mb / 49P	Double-data-rate architecture, two data transfers per clock cycle
Winbond	W972GG6JB-25	1Mb / 87P	Double Data Rate architecture: two data transfers per clock cycle

More results

M13S2561616A-2S Datasheet(PDF) 43 Page - Elite Semiconductor Memory Technology Inc.

M13S2561616A-2S Datasheet(HTML) 43 Page - Elite Semiconductor Memory Technology Inc.

Similar Part No. - M13S2561616A-2S

Similar Description - M13S2561616A-2S

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49

Datasheet Download

Link URL