M13S2561616A-2S datasheet(1/49 Pages) ESMT

Part #	M13S2561616A-2S

Description	Double-data-rate architecture, two data transfers per clock cycle

Download	49 Pages

Scroll/Zoom	100%

Manufacturer	ESMT [Elite Semiconductor Memory Technology Inc.]

Direct Link	http://www.esmt.com.tw/index.asp

Logo

1 / 49 page

ESMT

M13S2561616A (2S)

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc.

Publication Date : Jan. 2015

Revision : 1.0

1/49

DDR SDRAM

4M x 16 Bit x 4 Banks

Double Data Rate SDRAM

Features

Double-data-rate architecture, two data transfers per clock cycle

Bi-directional data strobe (DQS)

Differential clock inputs (CLK and CLK )

DLL aligns DQ and DQS transition with CLK transition

Four bank operation

CAS Latency : 2.5, 3, 4

Burst Type : Sequential and Interleave

Burst Length : 2, 4, 8

All inputs except data & DM are sampled at the rising edge of the system clock (CLK)

Data I/O transitions on both edges of data strobe (DQS)

DQS is edge-aligned with data for READs; center-aligned with data for WRITEs

Data mask (DM) for write masking only

VDD = 2.5V ± 0.2V, VDDQ = 2.5V ± 0.2V

7.8us refresh interval

Auto & Self refresh

2.5V I/O (SSTL_2 compatible)

Ordering Information

Product ID

Max Freq.

VDD

Package

Comments

M13S2561616A -5TIG2S

200MHz (DDR400)

M13S2561616A -6TIG2S

166MHz (DDR333)

66 pin TSOPII

M13S2561616A -5BIG2S

200MHz (DDR400)

M13S2561616A -6BIG2S

166MHz (DDR333)

2.5V

60 Ball BGA

Pb-free

Similar Part No. - M13S2561616A-2S

Manufacturer	Part #	Datasheet	Description
Elite Semiconductor Mem...	M13S2561616A-2A	1Mb / 49P	Double-data-rate architecture, two data transfers per clock cycle

More results

Similar Description - M13S2561616A-2S

Manufacturer	Part #	Datasheet	Description
Elite Semiconductor Mem...	M13S128324A-2M	1Mb / 48P	Double-data-rate architecture, two data transfers per clock cycle
Elite Semiconductor Mem...	M13S5121632A-2S	705Kb / 48P	Double-data-rate architecture, two data transfers per clock cycle
Winbond	W9412G2IB4	832Kb / 50P	Double Data Rate architecture; two data transfers per clock cycle
Winbond	W9412G6JH-5	1Mb / 53P	Double Data Rate architecture; two data transfers per clock cycle
Elite Semiconductor Mem...	M13S2561616A-2A	1Mb / 49P	Double-data-rate architecture, two data transfers per clock cycle
Winbond	W9751G6KB-25	1Mb / 87P	Double Data Rate architecture: two data transfers per clock cycle
Elite Semiconductor Mem...	M13L32321A-2G	1Mb / 48P	Double-data-rate architecture, two data transfers per clock cycle
Winbond	W631GG6KB-15	3Mb / 158P	Double Data Rate architecture: two data transfers per clock cycle
Elite Semiconductor Mem...	M13L2561616A-2A	1Mb / 49P	Double-data-rate architecture, two data transfers per clock cycle
Winbond	W972GG6JB-25	1Mb / 87P	Double Data Rate architecture: two data transfers per clock cycle

More results

M13S2561616A-2S Datasheet(PDF) 1 Page - Elite Semiconductor Memory Technology Inc.

M13S2561616A-2S Datasheet(HTML) 1 Page - Elite Semiconductor Memory Technology Inc.

Similar Part No. - M13S2561616A-2S

Similar Description - M13S2561616A-2S

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49

Datasheet Download

Link URL