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M13L2561616A-2A Datasheet(PDF) 21 Page - Elite Semiconductor Memory Technology Inc.

Part # M13L2561616A-2A
Description  Double-data-rate architecture, two data transfers per clock cycle
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Manufacturer  ESMT [Elite Semiconductor Memory Technology Inc.]
Direct Link  http://www.esmt.com.tw/index.asp
Logo ESMT - Elite Semiconductor Memory Technology Inc.

M13L2561616A-2A Datasheet(HTML) 21 Page - Elite Semiconductor Memory Technology Inc.

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ESMT
M13L2561616A (2A)
Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2012
Revision : 1.0
21/49
Write Interrupted by a Write
A Burst Write can be interrupted before completion of the burst by a new Write command, with the only restriction that the
interval that separates the commands must be at least one clock cycle. When the previous burst is interrupted, the remaining
addresses are overridden by the new address and data will be written into the device until the programmed burst length is
satisfied.
<Burst Length = 4>
01
23
4
5
6
7
8
CO M M A ND
DQ S
DQ ' s
NOP
NOP
NO P
NO P
NOP
NO P
N O P
DIN A0
WRIT E A
D IN A1
D IN B 2
DIN B3
D IN B0
DIN B1
CL K
CL K
1t CK
Hi - Z
Hi- Z
WR IT E B


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