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M13L2561616A-2A Datasheet(PDF) 21 Page - Elite Semiconductor Memory Technology Inc. |
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M13L2561616A-2A Datasheet(HTML) 21 Page - Elite Semiconductor Memory Technology Inc. |
21 / 49 page ESMT M13L2561616A (2A) Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2012 Revision : 1.0 21/49 Write Interrupted by a Write A Burst Write can be interrupted before completion of the burst by a new Write command, with the only restriction that the interval that separates the commands must be at least one clock cycle. When the previous burst is interrupted, the remaining addresses are overridden by the new address and data will be written into the device until the programmed burst length is satisfied. <Burst Length = 4> 01 23 4 5 6 7 8 CO M M A ND DQ S DQ ' s NOP NOP NO P NO P NOP NO P N O P DIN A0 WRIT E A D IN A1 D IN B 2 DIN B3 D IN B0 DIN B1 CL K CL K 1t CK Hi - Z Hi- Z WR IT E B |
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