M13L2561616A-2A datasheet(7/49 Pages) ESMT

Part #	M13L2561616A-2A

Description	Double-data-rate architecture, two data transfers per clock cycle

Download	49 Pages

Scroll/Zoom	100%

Manufacturer	ESMT [Elite Semiconductor Memory Technology Inc.]

Direct Link	http://www.esmt.com.tw/index.asp

Logo

7 / 49 page

ESMT

M13L2561616A (2A)

Elite Semiconductor Memory Technology Inc.

Publication Date : Sep. 2012

Revision : 1.0

7/49

IDD Specifications

Version

Symbol

-4

-5

-6

Unit

IDD0

90

80

70

mA

IDD1

120

110

100

mA

IDD2P

6

mA

IDD2F

50

mA

IDD2Q

50

mA

IDD3P

30

25

20

mA

IDD3N

60

55

50

mA

IDD4R

140

130

120

mA

IDD4W

140

130

120

mA

IDD5

150

140

130

mA

IDD6

3

mA

IDD7

230

220

210

mA

Input / Output Capacitance

Parameter

Package

Symbol

Min

Max

Delta Cap

(max)

Unit

Note

TSOP

2.5

4.5

pF

Input capacitance (A0~A12, BA0~BA1,

CKE, CS , RAS , CAS , WE )

BGA

CIN1

2

4

0.5

pF

1,4

TSOP

2.5

4.5

pF

Input capacitance (CLK, CLK )

BGA

CIN2

2

4

0.25

pF

1,4

TSOP

1.5

3.5

pF

Data & DQS input/output capacitance

BGA

COUT

1

3

0.5

pF

1,2,3,4

TSOP

1.5

3.5

pF

Input capacitance (DM)

BGA

CIN3

1

3

0.5

pF

1,2,3,4

Notes:

1. These values are guaranteed by design and are tested on a sample basis only.

2. Although DM is an input -only pin, the input capacitance of this pin must model the input capacitance of the DQ and

DQS pins. This is required to match signal propagation times of DQ, DQS, and DM in the system.

3. Unused pins are tied to ground.

4. This parameter is sampled. VDDQ = 3.3V ± 0.3V, VDD = 3.3V ± 0.3V. f=100MHz, TA =25°C, VOUT(DC) = VDDQ/2, VOUT

(peak to peak) = 0.2V. DM inputs are grouped with I/O pins - reflecting the fact that they are matched in loading (to

facilitate trace matching at the board level).

Similar Part No. - M13L2561616A-2A

Manufacturer	Part #	Datasheet	Description
Elite Semiconductor Mem...	M13L32321A-2G	1Mb / 48P	Double-data-rate architecture, two data transfers per clock cycle

More results

Similar Description - M13L2561616A-2A

Manufacturer	Part #	Datasheet	Description
Elite Semiconductor Mem...	M13S128324A-2M	1Mb / 48P	Double-data-rate architecture, two data transfers per clock cycle
	M13S5121632A-2S	705Kb / 48P	Double-data-rate architecture, two data transfers per clock cycle
	M13S2561616A-2S	1Mb / 49P	Double-data-rate architecture, two data transfers per clock cycle
Winbond	W9412G2IB4	832Kb / 50P	Double Data Rate architecture; two data transfers per clock cycle
Winbond	W9412G6JH-5	1Mb / 53P	Double Data Rate architecture; two data transfers per clock cycle
Elite Semiconductor Mem...	M13S2561616A-2A	1Mb / 49P	Double-data-rate architecture, two data transfers per clock cycle
Winbond	W9751G6KB-25	1Mb / 87P	Double Data Rate architecture: two data transfers per clock cycle
Elite Semiconductor Mem...	M13L32321A-2G	1Mb / 48P	Double-data-rate architecture, two data transfers per clock cycle
Winbond	W631GG6KB-15	3Mb / 158P	Double Data Rate architecture: two data transfers per clock cycle
Winbond	W972GG6JB-25	1Mb / 87P	Double Data Rate architecture: two data transfers per clock cycle

More results

M13L2561616A-2A Datasheet(PDF) 7 Page - Elite Semiconductor Memory Technology Inc.

M13L2561616A-2A Datasheet(HTML) 7 Page - Elite Semiconductor Memory Technology Inc.

Similar Part No. - M13L2561616A-2A

Similar Description - M13L2561616A-2A

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49

Datasheet Download

Link URL