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M13L2561616A-2A Datasheet(PDF) 34 Page - Elite Semiconductor Memory Technology Inc. |
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M13L2561616A-2A Datasheet(HTML) 34 Page - Elite Semiconductor Memory Technology Inc. |
34 / 49 page ESMT M13L2561616A (2A) Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2012 Revision : 1.0 34/49 Read with Auto Precharge (@ BL=8) CK E CS RA S CA S BA 0 , BA 1 WE DQ S ( C L = 2 ) DQ ( C L = 2 ) 01 234 567 8910 HI GH DM CO M M A ND A 10 /A P AD D R (A 0~ A n ) BAa Qa 4 Q a 5 Qa 7 Qa 6 BAa t RP Qa 0 Qa 1 Q a 3 Qa 2 ACTIVE READ Ca Auto pr ec har g e s t ar t No t e 1 CL K CL K Ra DQ S( C L = 2 . 5 ) D Q ( C L = 2. 5) Qa 4 Q a 5 Qa 7 Qa 6 Qa 0 Qa 1 Qa 3 Qa 2 :D o n ’ t c a r e 10 1 2 2B 1 6 R . B Note: 1. The row active command of the precharge bank can be issued after tRP from this point. The new read/write command of another activated bank can be issued from this point. At burst read/write with auto precharge, CAS interrupt of the same/another bank is illegal. |
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