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M13L32321A-2G Datasheet(PDF) 7 Page - Elite Semiconductor Memory Technology Inc.

Part # M13L32321A-2G
Description  Double-data-rate architecture, two data transfers per clock cycle
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Manufacturer  ESMT [Elite Semiconductor Memory Technology Inc.]
Direct Link  http://www.esmt.com.tw/index.asp
Logo ESMT - Elite Semiconductor Memory Technology Inc.

M13L32321A-2G Datasheet(HTML) 7 Page - Elite Semiconductor Memory Technology Inc.

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ESMT
M13L32321A (2G)
Elite Semiconductor Memory Technology Inc.
Publication Date : Oct. 2012
Revision : 1.0
7/48
IDD Specifications
Version
Symbol
-5
-6
-7.5
Unit
IDD0
125
115
105
mA
IDD1
145
135
125
mA
IDD2P
9
9
9
mA
IDD2F
85
85
85
mA
IDD2Q
85
85
85
mA
IDD3P
20
20
20
mA
IDD3N
105
105
105
mA
IDD4R
200
190
180
mA
IDD4W
200
190
180
mA
IDD5
180
170
160
mA
IDD6
3
3
3
mA
IDD7
250
240
230
mA
Input / Output Capacitance
(VDD = 3.3V ± 0.3V, VDDQ = 3.3V ± 0.3V, TA = 25 C
° , f = 1MHz)
Parameter
Symbol
Min
Max
Unit
Input capacitance (A0~A10, BA, CKE, CS ,
RAS , CAS , WE )
CIN1
1
4.5
pF
Input capacitance (CLK, CLK )
CIN2
1
5
pF
Data & DQS input/output capacitance
COUT
1
6.5
pF
Input capacitance (DM)
CIN3
1
6.5
pF


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