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M13L32321A-2G Datasheet(PDF) 34 Page - Elite Semiconductor Memory Technology Inc. |
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M13L32321A-2G Datasheet(HTML) 34 Page - Elite Semiconductor Memory Technology Inc. |
34 / 48 page ESMT M13L32321A (2G) Elite Semiconductor Memory Technology Inc. Publication Date : Oct. 2012 Revision : 1.0 34/48 Read with Auto Precharge (@ BL=8) CK E CS RA S CA S BA WE DQ S ( C L = 2 ) DQ ( C L = 2 ) 01 234 5 67 8910 HI G H DM CO M M A ND A 8 /AP AD D R (A 0 ~ A7 , A 9 ) Qa 4 Q a 5 Qa 7 Qa 6 t RP Qa 0 Qa 1 Q a 3 Qa 2 ACTIVE READ Ca A u to pr ec har g e s t ar t Not e 1 CL K CL K Ra DQ S( C L = 2 . 5 ) D Q ( C L = 2. 5) Qa 4 Q a 5 Qa 7 Qa 6 Qa 0 Qa 1 Qa 3 Qa 2 :D o n ’ t c a r e 1 1 10 1B 3 2 R . A Note: 1. The row active command of the precharge bank can be issued after tRP from this point. The new read/write command of another activated bank can be issued from this point. At burst read/write with auto precharge, CAS interrupt of the same/another bank is illegal. |
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