2

Symbol

Parameter

Units

Absolute Max.

Drain Voltage, RF output to ground

V

5.5

mW

605

CW RF Input Power

dBm

20

Junction Temperature

°C

150

Storage Temperature

°C

-65 to 150

Thermal Resistance

Notes:

1. Operation of this device in excess of any of

these limits may cause permanent damage.

2. Source lead temperature is 25° C. Derate 19.3

3. Thermal resistance measured using 150° C

Infra-Red Microscopy Technique.

Symbol

Parameter and Test Condition

Frequency

Units

Min.

Typ.

Max.

Quiescent Current

N/A

mA

57

69

84

NF

Noise Figure

1.9 GHz

2.5 GHz

dB

–

1.9

2.0

2.35

Gain

Gain

1.9 GHz

2.5 GHz

dB

18.2

19.5

20.5

21.2

Output Third Order Intercept Point

dBm

34.8

37.3

37.2

–

P1dB

Output Power at 1 dB Gain Compression

1.9 GHz

2.5 GHz

dBm

20.1

21.9

22.2

–

PAE

Power Added Efficiency at P1dB

1.9 GHz

2.5 GHz

%

–

39.1

40.2

–

IRL

Input Return Loss

1.9 GHz

2.5 GHz

dB

–

17.2

15.9

–

ORL

Output Return Loss

1.9 GHz

2.5 GHz

dB

–

10.1

18.5

–

ISOL

Isolation

1.9 GHz

2.5 GHz

dB

–

27.0

29.3

–

Note :

1. Measurements obtained from a test circuit described in Figure 25.

2. OIP3 test condition: F1 - F2 = 10 MHz, with input power of -12 dBm per tone measured at worst case side band.