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TIP125 Datasheet(PDF) 2 Page - ON Semiconductor |
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TIP125 Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 7 page  TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) www.onsemi.com 2 MAXIMUM RATINGS Rating Symbol TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 Unit Collector−Emitter Voltage VCEO 60 80 100 Vdc Collector−Base Voltage VCB 60 80 100 Vdc Emitter−Base Voltage VEB 5.0 Vdc Collector Current − Continuous − Peak IC 5.0 8.0 Adc Base Current IB 120 mAdc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 65 0.52 W W/°C Total Power Dissipation @ TA = 25°C Derate above 25°C PD 2.0 0.016 W W/°C Unclamped Inductive Load Energy (Note 1) E 50 mJ Operating and Storage Junction, Temperature Range TJ, Tstg – 65 to + 150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.92 °C/W Thermal Resistance, Junction−to−Ambient RqJA 62.5 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. IC = 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 2) (IC = 100 mAdc, IB = 0) TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 VCEO(sus) 60 80 100 − − − Vdc Collector Cutoff Current (VCE = 30 Vdc, IB = 0) TIP120, TIP125 (VCE = 40 Vdc, IB = 0) TIP121, TIP126 (VCE = 50 Vdc, IB = 0) TIP122, TIP127 ICEO − − − 0.5 0.5 0.5 mAdc Collector Cutoff Current (VCB = 60 Vdc, IE = 0) TIP120, TIP125 (VCB = 80 Vdc, IE = 0) TIP121, TIP126 (VCB = 100 Vdc, IE = 0) TIP122, TIP127 ICBO − − − 0.2 0.2 0.2 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 2.0 mAdc ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.5 Adc, VCE = 3.0 Vdc) (IC = 3.0 Adc, VCE = 3.0 Vdc) hFE 1000 1000 − − − Collector−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 12 mAdc) (IC = 5.0 Adc, IB = 20 mAdc) VCE(sat) − − 2.0 4.0 Vdc Base−Emitter On Voltage (IC = 3.0 Adc, VCE = 3.0 Vdc) VBE(on) − 2.5 Vdc DYNAMIC CHARACTERISTICS Small−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) hfe 4.0 − − Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz TIP125, TIP126, TIP127 TIP120, TIP121, TIP122 Cob − − 300 200 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2% |
Similar Part No. - TIP125 |
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Similar Description - TIP125 |
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