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IRFP3710PBF Datasheet(PDF) 1 Page - International Rectifier |
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IRFP3710PBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 9 page  IRFP3710PbF HEXFET® Power MOSFET PD - 95053A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247AC package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO- 247AC contribute to its wide acceptance throughout the industry. S D G Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 57 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 40 A IDM Pulsed Drain Current 180 PD @TC = 25°C Power Dissipation 200 W Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 530 mJ IAR Avalanche Current 28 A EAR Repetitive Avalanche Energy 20 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm) Absolute Maximum Ratings Parameter Typ. Max. Units RθJC Junction-to-Case 0.75 RθCS Case-to-Sink, Flat, Greased Surface 0.50 °C/W RθJA Junction-to-Ambient 62 Thermal Resistance VDSS = 100V RDS(on) = 0.025Ω ID = 57A l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description 5/26/05 l Lead-Free TO-247AC |
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